| PART |
Description |
Maker |
| MJF122-D MJF127 |
Complementary Power Darlingtons For Isolated Package Applications
Power 5A 100V Darlington NPN
Power 5A 100V PNP
|
ON Semiconductor
|
| IRFL9110 IRFL9110TR |
-100V Single P-Channel HEXFET Power MOSFET in a SOT-223 package
Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-1.1A)
|
IRF[International Rectifier]
|
| IRF520VL IRF520VS |
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A)
|
IRF[International Rectifier]
|
| IRF510S IRF510STRL IRF510STRR |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=5.6A)
|
IRF[International Rectifier]
|
| IRFS59N10D IRFSL59N10D IRFB59N10D IRFB59N10 IRFS59 |
Power MOSFET(Vdss=100V/ Rds(on)max=0.025ohm/ Id=59A)
Power MOSFET(Vdss=100V, Rds(on)max=0.025ohm, Id=59A)
HEXFET? Power MOSFET
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package
|
IRF[International Rectifier]
|
| IRFR9120 IRFU9120 FN3987 |
5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs(5.6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??)
P Channel Power MOSFET
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| IRF5M5210 IRF5M5210D IRF5M5210UPBF IRF5M5210-15 |
-100V Single P-Channel Hi-Rel MOSFET in a TO-254AA package
34 A, 100 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET
POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.07ohm, Id=-34A)
Avalanche Energy Ratings
|
IRF[International Rectifier]
|
| IRF9520 FN2281 |
6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??)
From old datasheet system
6A 100V 0.600 Ohm P-Channel Power MOSFET
6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF |
Simple Drive Requirements
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
-100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package
RADIATION HARDENED POWER MOSFET
100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY
1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
|
IRF[International Rectifier]
|
| TSD4M150 TSD4M150F TSD4M150V |
V(ds): 100V; V(dgr): 100V; V(gs): -20V; 500W; I(d): 135A; N-channel enhancement mode ISOFET power MOS transistor module. For DC-DC & DC-AC converters, SMPS & UPS, motor control, output storage for PWM, ultrasonic circuits
|
SGS Thomson Microelectronics
STMicroelectronics
ST Microelectronics
|
| BUZ22SMD BUZ22E3045A BUZ22E3046 |
Power MOSFET, 100V,D²PAK , RDSon=0.055 Ohm, 34A, NL
Low Voltage MOSFETs - Power MOSFET, 100V,DPAK , RDSon=0.055 Ohm, 34A, NL
N-Channel SIPMOS Power Transistor
|
Infineon
|
| IRF7350 IRF7350N IRF7350P IRF7350TR |
-100V Single DUAL-Channel HEXFET Power MOSFET in a SO-8 package
100V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss= -100V)
|
IRF[International Rectifier]
|
